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1

Influence of processing and annealing steps on electrical properties of InAlN/GaN high electron mobility transistor with Al2O3 gate insulation and passivation

K. Čičo, D. Gregušová, J. Kuzmík, M. Jurkovič, A. Alexewicz, M.-A. di Forte Poisson, D. Pogany, G. Strasser, S. Delage, K. Fröhlich

Journal:

Solid-State Electronics

Year:

2012

Language:

english

File:

PDF, 562 KB

english, 2012

2

Characterization of WNx metallization prepared by ion implantation of nitrogen

D Gregušová, T Lalinský, Ž Mozolová, D Machajdik, I Pochaba, I Vavra, M Porges

Journal:

Thin Solid Films

Year:

1994

Language:

english

File:

PDF, 707 KB

english, 1994

3

Optimization and performance of Al2O3/GaN metal–oxide–semiconductor structures

K. Čičo, J. Kuzmík, D. Gregušová, R. Stoklas, T. Lalinský, A. Georgakilas, D. Pogany, K. Fröhlich

Journal:

Microelectronics Reliability

Year:

2007

Language:

english

File:

PDF, 251 KB

english, 2007

4

Electrical properties of molecular beam epitaxial GaAs layers grown at low temperature

J. Betko, P. Kordos, S. Kuklovsky, A. Förster, D. Gregusová, H. Lüth

Journal:

Materials Science and Engineering: B

Year:

1994

Language:

english

File:

PDF, 360 KB

english, 1994

5

High-temperature performance of AlGaN/GaN HFETs and MOSHFETs

D. Donoval, M. Florovič, D. Gregušová, J. Kováč, P. Kordoš

Journal:

Microelectronics Reliability

Year:

2008

Language:

english

File:

PDF, 206 KB

english, 2008

6

Transport properties of AlGaN/GaN metal–oxide–semiconductor heterostructure field-effect transistors with Al2O3 of different thickness

P. Kordoš, D. Gregušová, R. Stoklas, Š. Gaži, J. Novák

Journal:

Solid-State Electronics

Year:

2008

Language:

english

File:

PDF, 274 KB

english, 2008

7

Influence of passivation induced stress on the performance of AlGaN/GaN HEMTs

D. Gregušová, J. Bernát, M. Držík, M. Marso, J. Novák, F. Uherek, P. Kordoš

Journal:

physica status solidi (c)

Year:

2005

Language:

english

File:

PDF, 201 KB

english, 2005

8

Optimization of the ohmic contact processing in InAlN//GaN high electron mobility transistors for lower temperature of annealing

Karol Čičo, Dagmar Gregušová, Štefan Gaži, Ján Šoltýs, Ján Kuzmík, Jean-François Carlin, Nicolas Grandjean, Dionýz Pogany, Karol Fröhlich

Journal:

physica status solidi (c)

Year:

2010

Language:

english

File:

PDF, 193 KB

english, 2010

9

The effect of oxygen in WNxfilms on thermal stability of WNx/GaAs interfaces

D. Gregušová, T. Lalinský, ž. Mozolová, J. Breza, P. Vogrinčič

Journal:

Journal of Materials Science: Materials in Electronics

Year:

1993

Language:

english

File:

PDF, 262 KB

english, 1993

10

Properties of WNx/GaAs Schottky contacts prepared by ion implantation of nitrogen

T. Lalinsky, J. Kuzmík, D. Gregušová, Ž. Mozolová, J. Breza, M. Feciško, P. Seidl

Journal:

Journal of Materials Science: Materials in Electronics

Year:

1992

Language:

english

File:

PDF, 435 KB

english, 1992

11

Dissociation, cognitive conflict and nonlinear patterns of heart rate dynamics in patients with unipolar depression

Petr Bob, Marek Susta, Alica Gregusova, Denisa Jasova

Journal:

Progress in Neuro-Psychopharmacology and Biological Psychiatry

Year:

2009

Language:

english

File:

PDF, 262 KB

english, 2009

12

Hot-Electron-Related Degradation in InAlN/GaN High-Electron-Mobility Transistors

Tapajna, Milan, Killat, Nicole, Palankovski, Vassil, Gregusova, Dagmar, Cico, Karol, Carlin, Jean-Francois, Grandjean, Nicolas, Kuball, Martin, Kuzmik, Jan

Journal:

IEEE Transactions on Electron Devices

Year:

2014

Language:

english

File:

PDF, 3.66 MB

english, 2014

13

Monolithic Integration of Ultrafast Photodetector and MESFET in the GaN Material System

Mikulics, M., Kordos, P., Gregusova, Dagmar, Adam, R., Kocan, Martin, Wu, Shuai, Zhang, J., Sobolewski, Roman, Grutzmacher, D., Marso, Michel

Journal:

IEEE Photonics Technology Letters

Year:

2011

Language:

english

File:

PDF, 420 KB

english, 2011

14

TRAUMATIC STRESS, DISSOCIATION, AND LIMBIC IRRITABILITY IN PATIENTS WITH UNIPOLAR DEPRESSION BEING TREATED WITH SSRIs 1,2

BOB, PETR, SUSTA, MAREK, GREGUSOVA, ALICA, JASOVA, DENISA, RABOCH, JIRI, MISHARA, AARON

Journal:

Psychological Reports

Year:

2010

Language:

english

File:

PDF, 409 KB

english, 2010

15

The effect of passivation on the performance of AlGaN/GaN heterostructure field-effect transistors

Kordoš, P, Kúdela, P, Gregušová, D, Donoval, D

Journal:

Semiconductor Science and Technology

Year:

2006

Language:

english

File:

PDF, 449 KB

english, 2006

16

Optimization of UV-assisted wet oxidation of GaAs

Gucmann, Filip, Kúdela, Róbert, Rosová, Alica, Dobročka, Edmund, Mičušík, Matej, Gregušová, Dagmar

Journal:

Journal of Vacuum Science & Technology B: Microelectronics and Nanometer Structures

Year:

2017

Language:

english

File:

PDF, 2.39 MB

english, 2017

17

High resolution physical analysis of ohmic contact formation at GaN-HEMT devices

Graff, A., Simon-Najasek, M., Altmann, F., Kuzmik, J., Gregušová, D., Haščík, Š., Jung, H., Baur, T., Grünenpütt, J., Blanck, H.

Journal:

Microelectronics Reliability

Year:

2017

Language:

english

File:

PDF, 2.59 MB

english, 2017

18

Characterization of interface states in AlGaN/GaN metal-oxide-semiconductor heterostructure field-effect transistors with HfO 2 gate dielectric grown by atomic layer deposition

Stoklas, R., Gregušová, D., Hasenöhrl, S., Brytavskyi, E., Ťapajna, M., Fröhlich, K., Haščík, Š., Gregor, M., Kuzmík, J.

Journal:

Applied Surface Science

Year:

2018

Language:

english

File:

PDF, 1.40 MB

english, 2018

19

Impact of oxide/barrier charge on threshold voltage instabilities in AlGaN/GaN metal-oxide-semiconductor heterostructures

Ťapajna, M., Drobný, J., Gucmann, F., Hušeková, K., Gregušová, D., Hashizume, T., Kuzmík, J.

Journal:

Materials Science in Semiconductor Processing

Year:

2019

Language:

english

File:

PDF, 483 KB

english, 2019

20

Scanning vector Hall probe microscopy

V. Cambel, D. Gregušová, J. Fedor, R. Kúdela, S.J. Bending

Journal:

Journal of Magnetism and Magnetic Materials

Year:

2004

Language:

english

File:

PDF, 247 KB

english, 2004

21

Magnetic elements for switching magnetization magnetic force microscopy tips

V. Cambel, P. Eliáš, D. Gregušová, J. Martaus, J. Fedor, G. Karapetrov, V. Novosad

Journal:

Journal of Magnetism and Magnetic Materials

Year:

2010

Language:

english

File:

PDF, 871 KB

english, 2010

22

Technology and properties of a vector hall sensor

D. Gregušová, P. Eliáš, Z. Oszi, R. Kúdela, J. Šoltýs, J. Fedor, V. Cambel, I. Kostič

Journal:

Microelectronics Journal

Year:

2006

Language:

english

File:

PDF, 147 KB

english, 2006

23

AFM nanooxidation process – Technology perspective for mesoscopic structures

V. Cambel, J. Martaus, J. Šoltýs, R. Kúdela, D. Gregušová

Journal:

Surface Science

Year:

2007

Language:

english

File:

PDF, 941 KB

english, 2007

24

Local anodic oxidation by AFM tip developed for novel semiconductor nanodevices

Vladimír Cambel, Jozef Martaus, Ján Šoltýs, Robert Kúdela, Dagmar Gregušová

Journal:

Ultramicroscopy

Year:

2008

Language:

english

File:

PDF, 490 KB

english, 2008

25

Investigation of the GaAs-pyramids overgrowth using MOCVD

D. Gregušová, V. Cambel, R. Kúdela, J. Šoltỳs, I. Kostiè, G. Attolini, C. Pelosi

Journal:

Journal of Crystal Growth

Year:

2003

Language:

english

File:

PDF, 543 KB

english, 2003

26

Characterisation of InGaAs/InP microscopic Hall probe arrays with a 2DEG active layer

V Cambel, D Gregušová, P Eliáš, S Hasenöhrl, B Olejnı́ková, J Novák, T Schäpers, K Neurohr, A Fox

Journal:

Materials Science and Engineering: B

Year:

1998

Language:

english

File:

PDF, 134 KB

english, 1998

27

Comparative study on unpassivated and passivated AlGaN/GaN HFETs and MOSHFETs

G. Heidelberger, J. Bernát, A. Fox, M. Marso, H. Lüth, D. Gregušová, P. Kordoš

Journal:

physica status solidi (a)

Year:

2006

Language:

english

File:

PDF, 324 KB

english, 2006

28

Wet chemical MESA etching of InGaP and GaAs with solutions based on HCl, CH3COOH, and H2O2

D. Gregušová, P. Eliáš, L. Malacký, R. Kúdela, J. Škriniarová

Journal:

physica status solidi (a)

Year:

1995

Language:

english

File:

PDF, 401 KB

english, 1995

29

Impact of growth conditions on the spatial non-uniformities of composition in InGaP epitaxial layers

D. Gregušová, M. Kučera, S. Hasenöhrl, I. Vávra, P. Štrichovanec, J. Martaus, J. Novák

Journal:

physica status solidi (c)

Year:

2007

Language:

english

File:

PDF, 205 KB

english, 2007

30

Characterization of AlGaN/GaN MOSHFETs with Al2O3 as gate oxide

D. Gregušová, R. Stoklas, K. Čičo, G. Heidelberger, M. Marso, J. Novák, P. Kordoš

Journal:

physica status solidi (c)

Year:

2007

Language:

english

File:

PDF, 223 KB

english, 2007

31

Enhancement of effective carrier velocity in AlGaN/GaN MOSHFETs with Al2O3 gate oxide

R. Stoklas, Š. Gaži, D. Gregušová, J. Novák, P. Kordoš

Journal:

physica status solidi (c)

Year:

2008

Language:

english

File:

PDF, 162 KB

english, 2008

32

Structure and properties of disiloxane: An ab initio and post-Hartree–Fock study

Afaf R. Al Derzi, Adriana Gregušová, Keith Runge, Rodney J. Bartlett

Journal:

International Journal of Quantum Chemistry

Year:

2008

Language:

english

File:

PDF, 132 KB

english, 2008

33

New resin gel for uranium determination by diffusive gradient in thin films technique

Michaela Gregusova, Bohumil Docekal

Journal:

Analytica Chimica Acta

Year:

2011

Language:

english

File:

PDF, 191 KB

english, 2011

34

New approach to local anodic oxidation of semiconductor heterostructures

Jozef Martaus, Dagmar Gregušová, Vladimír Cambel, Robert Kúdela, Ján Šoltýs

Journal:

Ultramicroscopy

Year:

2008

Language:

english

File:

PDF, 724 KB

english, 2008

35

On-tip sub-micrometer Hall probes for magnetic microscopy prepared by AFM lithography

D. Gregušová, J. Martaus, J. Fedor, R. Kúdela, I. Kostič, V. Cambel

Journal:

Ultramicroscopy

Year:

2009

Language:

english

File:

PDF, 409 KB

english, 2009

36

Novel Hall sensors developed for magnetic field imaging systems

Vladimír Cambel, Goran Karapetrov, Valentyn Novosad, Elena Bartolomé, Dagmar Gregušová, Ján Fedor, Robert Kúdela, Ján Šoltýs

Journal:

Journal of Magnetism and Magnetic Materials

Year:

2007

Language:

english

File:

PDF, 516 KB

english, 2007

37

Trapping effects in Al2O3/AlGaN/GaN metal-oxide-semiconductor heterostructure field-effect transistor investigated by temperature dependent conductance measurements

Kordos, P., Stoklas, R., Gregusova, D., Gazi, S., Novak, J.

Journal:

Applied Physics Letters

Year:

2010

Language:

english

File:

PDF, 436 KB

english, 2010

38

Depression, sensitization and chaos in autonomic response: Implications for anticonvulsant treatment

P. Bob, M. Susta, A. Vecerova-Prochazkova, A. Gregusova, D. Jasova, P. Fedor-Freybergh, J. Raboch

Journal:

European Psychiatry

Year:

2008

Language:

english

File:

PDF, 46 KB

english, 2008

39

Increase of uridine kinase activity after infection of cells with vaccinia and rous sarcoma viruses

B. Rada, Veronica Gregušová

Journal:

Biochemical and Biophysical Research Communications

Year:

1964

Language:

english

File:

PDF, 234 KB

english, 1964

40

Ni/Au–Al2O3 gate stack prepared by low-temperature ALD and lift-off for MOS HEMTs

Blaho, Michal, Gregušová, Dagmar, Jurkovič, Michal, Haščík, Štefan, Fedor, Ján, Kordoš, Peter, Fröhlich, Karol, Brunner, Frank, Cho, Melani, Hilt, Oliver, Würfl, Joachim, Kuzmík, Ján

Journal:

Microelectronic Engineering

Year:

2013

Language:

english

File:

PDF, 1.78 MB

english, 2013

41

Schottky-barrier normally off GaN/InAlN/AlN/GaN HEMT with selectively etched access region

Jurkovic, M., Gregusova, D., Palankovski, V., Hascik, Stefan, Blaho, M., Cico, K., Frohlich, K., Carlin, J., Grandjean, N., Kuzmik, J.

Journal:

IEEE Electron Device Letters

Year:

2013

Language:

english

File:

PDF, 329 KB

english, 2013

42

AlGaN/GaN metal–oxide–semiconductor heterostructure field-effect transistors with 4 nm thick Al 2 O 3 gate oxide

Gregušová, D, Stoklas, R, Čičo, K, Lalinský, T, Kordoš, P

Journal:

Semiconductor Science and Technology

Year:

2007

Language:

english

File:

PDF, 455 KB

english, 2007

43

Mo1204 Screening for Latent Tuberculosis Is Effective but Does Not Fully Protect Against Tuberculosis Reactivation During antiTNF Treatment in Areas With High Background Incidence of Tuberculosis

Zelinkova, Zuzana, Zakuciova, Maria, Gombosova, Laura, Veseliny, Eduard, Horakova, Marta, Lietava, Peter, Palencikova, Katarina, Kadleckova, Barbora, Gregus, Milos, Gregusova, Katarina, Pav, Igor, Hla

Journal:

Gastroenterology

Year:

2014

Language:

english

File:

PDF, 149 KB

english, 2014

44

P353 Screening for latent tuberculosis is effective but does not fully protect against tuberculosis reactivation during anti-TNF treatment in areas with high background incidence of tuberculosis

Zelinkova, Z., Zakuciova, M., Gombosova, L., Veseliny, E., Horakova, M., Lietava, P., Palencikova, K., Kadleckova, B., Gregus, M., Gregusova, K., Pav, I., Hlavaty, T., Koller, T., Toth, J., Hlista, M.

Journal:

Journal of Crohn's and Colitis

Year:

2014

Language:

english

File:

PDF, 49 KB

english, 2014

45

Dye decolorisation by laccase immobilised in lens-shaped poly(vinyl alcohol) hydrogel capsules

Stloukal, Radek, Watzková, Jarmila, Gregušová, Barbora

Journal:

Chemical Papers

Year:

2014

Language:

english

File:

PDF, 253 KB

english, 2014

46

High resolution characterization of uranium in sediments by DGT and DET techniques ACA-S-12-2197

Gregusova, Michaela, Docekal, Bohumil

Journal:

Analytica Chimica Acta

Year:

2013

Language:

english

File:

PDF, 659 KB

english, 2013

47

[IEEE 2006 International Conference on Advanced Semiconductor Devices and Microsystems - Smolenice, Slovakia (2006.10.16-2006.10.18)] 2006 International Conference on Advanced Semiconductor Devices and Microsystems - Deposition of AZ5214-E Layers on Non-planar Substrates with a "Draping" Technique

Elias, P., Gregusova, D., Strichovanec, P., Kostic, I., Novak, J.

Year:

2006

Language:

english

File:

PDF, 3.70 MB

english, 2006

48

[IEEE 2012 International Conference on Advanced Semiconductor Devices & Microsystems (ASDAM) - Smolenice, Slovakia (2012.11.11-2012.11.15)] The Ninth International Conference on Advanced Semiconductor Devices and Mircosystems - Early stage degradation of InAlN/GaN HEMTs during electrical stress

Tapajna, M., Gregusova, D., Cico, K., Fedor, J., Carlin, J.-F., Grandjean, N., Killat, N., Kuball, M., Kuzmik, J.

Year:

2012

Language:

english

File:

PDF, 145 KB

english, 2012

49

HNNC Radical and Its Role in the CH + N 2 Reaction †

Berman, Michael R., Tsuchiya, Takashi, Gregušová, Adriana, Perera, S. Ajith, Bartlett, Rodney J.

Journal:

Journal of Physical Chemistry A

Year:

2007

Language:

english

File:

PDF, 308 KB

english, 2007

50

Ab Initio Study of Hydrogen Cyanide Borane(1) Polymer and Its Dehydrogenated Analog

Gregušová, Adriana, Varga, Štefan, Černušák, Ivan, Noga, Jozef

Journal:

Journal of Physical Chemistry B

Year:

2002

Language:

english

File:

PDF, 114 KB

english, 2002